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STS2DPF80
DUAL P-CHANNEL 80V - 0.21 - 2.3A SO-8 STripFETTM POWER MOSFET
TYPE STS2DPF80

VDSS 80 V
RDS(on) <0.25
ID 2.3 A
TYPICAL RDS(on) = 0.21 STANDARD OUTLINE FOR EASY AUTOMATED SURFACE MOUNT ASSEMBLY
DESCRIPTION This application specific Power MOSFET is the second generation of STMicroelectronis unique "Single Feature SizeTM" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS DC/DC CONVERTERS BATTERY MANAGEMENT IN NOMADIC EQUIPMENT POWER MANAGEMENT IN CELLULAR PHONES AND DISPLAY NEW GENERATION
SO-8
INTERNAL SCHEMATIC DIAGRAM
Ordering Information
SALES TYPE STS8DPF80 MARKING S8DPF80 PACKAGE SO-8 PACKAGING TAPE & REEL
ABSOLUTE MAXIMUM RATINGS
Symbol VDS VDGR VGS ID IDM(*) Ptot Tstg Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 k) Gate- source Voltage Drain Current (continuous) at TC = 25C Single Operation Drain Current (continuous) at TC = 100C Single Operation Drain Current (pulsed) Total Dissipation at TC = 25C Storage Temperature Value 80 80 20 2.0 1.3 8 2.5 -55 to 150 150 Unit V V V A A A W C C
Tj Max. Operating Junction Temperature (*) Pulse width limited by safe operating area. June 2004
Note: For the P-CHANNEL MOSFET actual polarity of voltages and current has to be reversed
Rev.0.1
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TAB.1 THERMAL DATA
Rthj-PCB(*) Thermal Resistance Junction-PCB 62.5 C/W
(*) When Mounted on 1 inch2 FR-4 board, 2 oz of Cu and t [ 10 sec.
ELECTRICAL CHARACTERISTICS (TCASE = 25 C UNLESS OTHERWISE SPECIFIED) TAB.2 OFF
Symbol V(BR)DSS IDSS IGSS Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (VGS = 0) Gate-body Leakage Current (VDS = 0) Test Conditions ID = 250 A, VGS = 0 VDS = Max Rating VDS = Max Rating TC = 125C VGS = 20 V Min. 80 1 10 100 Typ. Max. Unit V A A nA
TAB.3 ON (*)
Symbol VGS(th) RDS(on) Parameter Gate Threshold Voltage Static Drain-source On Resistance Test Conditions VDS = VGS VGS = 10 V ID = 250 A ID = 1 A Min. 2 0.21 Typ. Max. 4 0.25 Unit V
TAB.4 DYNAMIC
Symbol gfs (*) Ciss Coss Crss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions VDS= 10V ID = 1 A Min. Typ. 4 739 89.5 31 Max. Unit S pF pF pF
VDS = 25V, f = 1 MHz, VGS = 0
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ELECTRICAL CHARACTERISTICS (continued) TAB.5 SWITCHING ON
Symbol td(on) tr Qg Qgs Qgd Parameter Turn-on Delay Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions ID = 1 A VDD = 40 V VGS = 10 V RG = 4.7 (Resistive Load, Figure 1) VDD= 64V ID= 2A VGS=10V (See test circuit, Figure 2) Min. Typ. 13.5 18 20 2.5 4.9 Max. Unit ns ns nC nC nC
TAB.6 SWITCHING OFF
Symbol td(off) tf Parameter Turn-off Delay Time Fall Time Test Conditions VDD = 40 V ID = 1 A VGS = 10 V RG = 4.7, (Resistive Load, Figure 1) Min. Typ. 32 13 Max. Unit ns ns
TAB.7 SOURCE DRAIN DIODE
Symbol ISD ISDM (*) VSD (*) trr Qrr IRRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 1 A VGS = 0 47 87 3.7 Test Conditions Min. Typ. Max. 2.3 9.2 1.2 Unit A A V ns nC A
ISD = 2 A di/dt = 100A/s Tj = 150C VDD = 40 V (See test circuit, Figure 3)
(*)Pulsed: Pulse duration = 300 s, duty cycle 1.5 %. (*)Pulse width limited by safe operating area.
Safe Operating Area
Thermal Impedance
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Output Characteristics Transfer Characteristics
Transconductance
Static Drain-source On Resistance
Gate Charge vs Gate-source Voltage
Capacitance Variations
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Normalized Gate Threshold Voltage vs Temperature Normalized on Resistance vs Temperature
Source-drain Diode Forward Characteristics
Normalized Breakdown Voltage Temperature.
.
.
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Fig. 1: Switching Times Test Circuits For Resistive Load Fig. 2: Gate Charge test Circuit
Fig. 3: Test Circuit For Diode Recovery Behaviour
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SO-8 MECHANICAL DATA
DIM. MIN. A a1 a2 a3 b b1 C c1 D E e e3 F L M S 3.8 0.4 4.8 5.8 1.27 3.81 4.0 1.27 0.6 8 (max.) 0.14 0.015 5.0 6.2 0.65 0.35 0.19 0.25 0.1 mm TYP. MAX. 1.75 0.25 1.65 0.85 0.48 0.25 0.5 45 (typ.) 0.188 0.228 0.050 0.150 0.157 0.050 0.023 0.196 0.244 0.025 0.013 0.007 0.010 0.003 MIN. inch TYP. MAX. 0.068 0.009 0.064 0.033 0.018 0.010 0.019
0016023
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Revision History
Date
Wednesday 16 June 2004
Revision
0.1 FIRST ISSUE
Description of Changes
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Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is registered trademark of STMicroelectronics All other names are the property of their respective owners.
(c) 2004 STMicroelectronics - All Rights Reserved
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